Context
Thanks to their nanometer-scale detection area and their
bottom up fabrication process, nanowire photodetectors
promise high sensitivity, ultra-fast response, and very
large scale integration.
Semiconducting nanowire feature unique properties for
photodetection thanks to their reduced dimensions,
waveguiding properties, and high surface-to-volume ratio.
They concentrate light in a similar way to a concentrating
lens. Furthermore, nanowires showed photoconductive or
impact-ionization gain with ps time response (see
here
).
Also, nanowires can be synthesized on silicon, which opens
the possibility of monolithic integration of detector and
readout.
GaAs nanowires
In this context, we are interested in photodetectors working
in the visible range for biosensing applications.
We build photodetectors based on GaAs/AlGaAs
nanowires. We study the materials properties with
photoluminescence spectroscopy and cathodoluminescence in
complement to electron microscopy. The devices are measured
on photodetection setups with various excitation
wavelengths, chopping frequency, etc...