"Interlayer magnetoresistance in strongly anisotropic quasi-2D compounds"

The angular and field dependence of magnetoresistance (MR) is a very powerful tool to determine the details of electronic spectrum and of Fermi-surface geometry of various compounds, which is crucial for understanding their electronic properties. Recently, the magnetic quantum oscillations (MQO) and angular magnetoresistance oscillations were applied to extract the Fermi-surface geometry and the electron dispersion in cuprate and pnictide high-temperature superconductors. Both these effects are traditionally used to study the electron dispersion in layered organic metals and most other metallic compounds. As the anisotropy of the compounds increases, the standard 3D theory of magnetoresistance becomes inapplicable, and a new theoretical description is required.

The theory of magnetoresistance is developed in the “weakly incoherent” limit, when the electron interlayer tunneling conserves the in-plane momentum, but the time of this tunneling is much longer than mean scattering time by impurities and/or cyclotron period [1-3]. This theory predicts several new qualitative features. First, the nonoscillating part of interlayer magnetoresistance increases as a square root of interlayer component of magnetic field. This contradicts the standard theory of magnetoresistance, which states that only a perpendicular-to-current component of magnetic field affects this current. The magnetic quantum oscillations are stronger damped in this limit and the angular dependence of magnetoresistance changes compared to the predictions of the standard theory. These new features in magnetoresistance appear because the effect of impurity scattering is enhanced by low-dimensionality, naturally appearing in layered conductors. The experiments on magnetoresistance in layered organic metal have been performed to check the predictions of the new theory. The agreement turned out to be very nice, especially for clean samples.[4] In strongly anisotropic compounds with low electron concentration a magnetic field may lead to even steeper field-dependence of interlayer magnetoresistance because of the Coulomb anomaly.[5,6]

*References*
1. P. D. Grigoriev, Phys. Rev. B *83*, 245129 (2011).
2. P. D. Grigoriev, JETP Letters *94*, 47 (2011).
3. P.D. Grigoriev, Fizika Nizkikh Temperatur, *37* (9-10), 930 (2011).
4. P. D. Grigoriev, M. V. Kartsovnik, W. Biberacher, Phys. Rev. B *86*, 165125 (2012).
5. P. D. Grigoriev, Physica B *407*, 1932 (2012); ArXiv: cond-mat/1111.2432
6. P. D. Grigoriev, to be published.