"Mechanism of resistive switching in bipolar transition metal oxides"
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Resistive random access memory (RRAM) composed of a transtition metal
oxide dielectric in a capacitor-
like structure is a candidate technology for next generation
non-volatile memory devices [1]. We introduce
a model that accounts for the bipolar resistive switching phenomenom
observed in many perovskite
transition metal oxides [2]. The numerical study of the model predicts
that strong electric fields develop
in the highly resistive dielectric-electrode interfaces, leading to a
spatially inhomogeneous distribution of
oxygen vacancies and a concomitant nonvolatile resistance memory
effect. The theoretical results of the
model are validated by successful comparison with non-trivial
resistance hysteresis loops measured in
cuprate YBCO and manganite PCLMO samples. Insights from the model
simulations are used to propose
a novel multi-level and non-volatile memory cell. We shall present
results for an implementation of a 6-bit
multi-leve memory cell device [3].
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[1] M. Rozenberg, Scholarpedia 6(4), 11414 (2011)
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[2] M. Rozenberg, M. J. Sanchez, R. Weht, C. Acha, F. G. Marlasca, and
P. Levy, Phys. Rev. B 81, 115101
(2010).
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[3] P. Stoliar et al. (submitted).