Vincent BOUCHIAT

bouchiat@grenoble.cnrs.fr

Directeur de Recherches au CNRS,

Département Nanosciences, Institut Néel, CNRS-Grenoble

Linkedin page

ORCID ID  0000-0002-9818-8181

 

  1. 2019


104.  Highly flexible superconducting films with metal-decorated composite 2D materials, Pauline Ronseaux, Riadh Othmen, Dipankar Kalita, Zheng Han, Laëtitia Marty, Nedjma Bendiab, Julien Renard and Vincent Bouchiat, Journal of Applied Physics, (2019) .


103. Evolution of inter-layer coupling in artificially stacked bilayer MoS2 , S. Sarkar, H.L. Pradeepa, G. Nayak, L. Marty, J. Renard, J. Coraux, N. Bendiab, V. Bouchiat, J. K. Basu and A. Bid, Nanoscale Adv., 2019, DOI: 10.1039/C9NA00517J.


102. Cathodo-luminescence enhancement and quenching in type-I van der Waals  heterostructures: Cleanliness of the interfaces and defects creation, Nayak, Goutham; Lisi, Simone; Liu, Wei-Lai; Jakubczyk, T.; Stepanov, Petr; Donatini, Fabrice; Watanabe, Kenji; Taniguchi, Takashi; Bid, Aveek; Kasprzak, J.; Richard, Maxime ; Bouchiat, Vincent; Coraux, Johann; Marty, Laëtitia; Bendiab, Nedjma; Renard, Julien,  Physical Review Materials. (2019) .



101.Room temperature 2D ferromagnetism in few-layered 1T-CrTe2

Xingdan Sun, Wanying Li, Xiao Wang, Qi Sui, Tongyao Zhang, Zhi Wang, Long Liu, Da Li, Shun Feng, Siyu Zhong, Hanwen Wang, Vincent Bouchiat, Manuel Nunez Regueiro, Nicolas Rougemaille, Johann Coraux, Zhenhua Wang, Baojuan Dong, Xing Wu, Teng Yang, Guoqiang Yu, Bingwu Wang, Zheng Vitto Han, Xiufeng Han, Zhidong Zhang, Xiufeng Han, Zhidong Zhang, https://arxiv.org/abs/1909.09797



100. Introducing a biomimetic coating for graphene neuroelectronics: toward in-vivo applications

Bourrier, Antoine; Szarpak-Jankowska, anna; veliev, farida; Olarte-Hernandez, Renato; Shkorbatova, Polina; Bonizzato, Marco ;  Rey , Elodie;  Barraud , Quentin; Briançon-Marjollet, Anne; auzély, rachel; Courtine, Gregoire; Bouchiat, Vincent; Delacour, Cécile

Biomedical Physics & Engineering Express, 2019. DOI: 10.1088/2057-1976/ab42d6



99. Magneto-spectroscopy of exciton Rydberg states in a CVD grown WSe_2 monolayer

Delhomme A, Butseraen G, Zheng B, Marty L, Bouchiat V, Molas MR, Renard J. C. Faugeras . Appl Phys Lett. AIP Publishing; 2019;114(23):232104.



98. Monolayer Graphene Coating of Intracortical Probes for Long‐Lasting Neural Activity Monitoring, Antoine Bourrier, Polina Shkorbatova, Marco Bonizzato, Elodie Rey, Quentin Barraud, Gregoire Courtine, Riadh Othmen, Valerie Reita ,Vincent Bouchiat, Cécile Delacour, Adv. Health. Mat.  vol. 8 , 1801331, (2019) DOI: 10.1002/adhm.201801331



















97.  Coherence and Density Dynamics of Excitons in a Single-Layer MoS 2 Reaching the Homogeneous Limit, T. Jakubczyk et al, ACS Nano 13, 3500 (2019)




96. CF4/H2 Plasma Cleaning of Graphene Regenerates Electronic Properties of the Pristine Material, Djawhar Ferrah, Olivier Renault, Daniil Marinov, Javier Arias-Zapata, Nicolas Chevalier, Denis Mariolle, Denis Rouchon, Hanako Okuno, Vincent Bouchiat, and Gilles Cunge, ACS Appl. Nano Mater.DOI: 10.1021/acsanm.8b02249  (2019)).



95. Liquid-phase exfoliation of graphite into graphene nanosheets in a hydrocavitating “lab-on-a-chip.” Qiu X, Bouchiat V, Colombet D, Ayela F.  Royal Society of Chemistry Advances, vol. 9, 3232 - 3238 (2019).




  1. 2018


94. High density H2 and He plasmas: can they be used to treat graphene? , H-A. Mehedi, D. Ferrah, J. Dubois, C. Petit-Etienne, H. Okuno, V. Bouchiat, O. Renault and G. Cunge, Journal of Applied Physics vol. 124, 125304 (2018).




  4. 93. Self-assembled UV photodetector made by direct epitaxial GaN growth on graphene. Journot T, Bouchiat V, Gayral B, Dijon J, Hyot B.

  5. ACS Appl Mater Interfaces. ACS Appl. Mater. Interfaces  vol.10, 22, 18857-18862





  10. 92. Unravelling external perturbation effects on the optical phonon response of graphene, Nedjma Bendiab, Julien Renard, Cornelia Schwarz,     Antoine Reserbat-Plantey, Léo Djevahirdjian, Vincent Bouchiat, Johann Coraux and Laëtitia Marty, J. of  Raman Spec. Volume 49, pp.130-145 (2018).




  14. 91. Sensing ion channels in neuronal networks with graphene transistors , Farida Veliev, Alessandro Crest, Dipankar Kalita, Antoine Bourrier, Tiphaine Belloir, Anne Briançon-Marjollet, Mireille Albrieux, Stephan Roche, Vincent Bouchiat and Cécile Delacour, 2D Mater. vol. 5 045020 (2018)

  15. doi/10.1088/2053-1583/aad78f



  18. 90. Large scale graphene/h-BN heterostructures obtained by direct CVD growth of graphene using high-yield proximity-catalytic process, Hadi Arjmandi-Tash, Dipankar Kalita, Zheng Han , Riadh Othmen, Goutham Nayak , Cecile Berne , John Landers, Kenji Watanabe , Takashi Taniguchi , Laëtitia Marty , Johann Coraux, Nedjma Bendiab and Vincent Bouchiat  J. Phys. Mater. vol.1 015003  (2018). arXiv:1701.06057.




  22. 2017


  24. 89. Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS2 in Presence of Defects, Strain, and Charged Impurities, Sudipta Dubey, Simone Lisi, Goutham Nayak, Felix Herziger, Van-Dung Nguyen, Toai Le Quang, Vladimir Cherkez, Cézar González, Yannick J. Dappe, Kenji Watanabe, Takashi Taniguchi, Laurence Magaud, Pierre Mallet, Jean-Yves Veuillen, Raul Arenal, Laëtitia Marty, Julien Renard, Nedjma Bendiab, Johann Coraux, and Vincent Bouchiat ,ACS Nano, October 9, 2017, 10.1021/acsnano.7b05520



  27. 88. Ambipolar gate-tunable diode based on tunnel-contacted atomically-thin MoS2.

  28. Xiaoxi Li, Zhiqiang Fan, Peizhi Liu, Maolin Chen, Xin Liu,Chuankun Jia, Dongming Sun, Xiangwei Jiang, Zheng Han Vincent Bouchiat,

  29. Junjie Guo, Jianhao Chen and Zhidong Zhan, Nature Communications 8, Article number: 970 (2017) doi:10.1038/s41467-017-01128-9



  32. 87. Recordings of spontaneous spikes evoked in hippocampal neurons by flexible and transparent graphene transistors, Farida Veliev, Zheng Han, Dipankar Kalita, Anne Briançon-Marjollet, Vincent Bouchiat, Cécile Delacour, Frontiers in Neurosci. doi: 10.3389/fnins.2017.00466   (2017).



  35. 86. Antiresonances in the Mid-Infrared Vibrational Spectrum of Functionalized Graphene,  François Lapointe, Bruno Rousseau, Vincent Aymong, Minh Nguyen, Maxime Biron, Etienne Gaufrès, Saman Choubak, Zheng Han, Vincent Bouchiat,  Patrick Desjardins,  Michel Côté and Richard Martel, J. Phys. Chem.jp-2017-01386b.R1  (2017)


  37. 85. Light control of charge transfer and excitonic  transitions in a Carbon Nanotube-Porphyrin hybrid, Yani Chen, Guy Royal, Emmanuel Flahaut, Saioa Cobo, Vincent Bouchiat, Laëtitia Marty, and Nedjma Bendiab, Adv Mater.  17;79:1605745–7 (2017).



  40. 84.
    Large scale integration of CVD-graphene based NEMS with narrow distribution of resonance parameters.

  41. H. Arjmandi Tash, A. Allain, Adrien;  Zheng Han & Vincent Bouchiat, 2D Materials 4 025023 (2017).


  43. 83. Effect of aging-induced disorder on the quantum transport properties of few-layer WTe2.

  44. Wei Lai Liu, Mao Lin Chen, Xiao Xi Li, Sudipta Dubey, Ting Xiong, Zhi Ming Dai, Jun Yin, Wan Lin Guo, Jin Long Ma, Ya Ni Chen, Jun Tan, Da Li, Zhen Hua Wang, Wu Li,Vincent Bouchiat, Dong Ming Sun, Zheng Han and Zhi Dong Zhang. 2D Mater. 4 011011 (2017).


  46. 82.
    Tunable transmission of quantum Hall edge channels with full degeneracy lifting in split-gated graphene devices

  47. Katrin Zimmermann, Anna Jordan, Frédéric Gay, Kenji Watanabe, Takashi Taniguchi, Zheng Han, Vincent Bouchiat, Hermann Sellier, Benjamin Sacépé , Nature Com. 14983  (2017).




  51. 2016


  53. 81. Deviation from the normal mode expansion in a coupled graphene-nanomechanical system.

  54. Cornelia Schwarz, Benjamin Pigeau, Laure Mercier de Lépinay, Aurélien Kuhn, Dipankar Kalita, Nedjma Bendiab, Laëtitia Marty, Vincent Bouchiat, Olivier Arcizet,  Phys. Rev. Applied 6, 064021, 2016.



  57. 80. Impact of crystalline quality on neuronal affinity of pristine graphene. 

  58. Farida Veliev, Anne Briançon−Marjollet, Vincent Bouchiat, Cécile Delacour, Biomaterials, Elsevier, 86, pp.33−41 (2016).



  61. 79.
    A synthetic redox biofilm made from metallo-protein–prion domain chimera nanowires.

  62. Lucie Altamura, Christophe Horvath, Saravanan Rengaraj, Anaëlle Rongier, Kamal Elouarzaki, Chantal Gondran, Anthony L. B. Maçon, Charlotte Vendrely, Vincent Bouchiat, Marc Fontecave, Denis Mariolle, Patrice Rannou, Alan Le Goff, Nicolas Duraffourg, Michael Holzinger & Vincent Forge, Nature Chemistry, doi:10.1038/nchem.2616 (2016).



  65. 78.XPS investigations of graphene surface cleaning using H2 and Cl2-based inductively coupled plasmas. D Ferrah, O Renault, C Petit, Etienne, H Okuno, C Berne, V Bouchiat, G Cunge (2016), Surface and Interface Analysis,Volume 48, Issue 7, Pages 451–455, July (2016).



77.
Biaxial Strain Transfer in Supported Graphene C. Bousige, F. Balima, D. Machon, G. S. Pinheiro,A. Torres-Dias, J. Nicolle, D. Kalita, N. Bendiab, L. Marty,V. Bouchiat, G. Montagnac, A. G. Souza Filho, P. Poncharal,and A. San-Miguel, Nanoletters 2016 DOI: 10.1021/acs.nanolett.6b02981


  2. 76.
    Nanofaceting as a stamp for periodic graphene charge carrier modulations

  3. M. Vondracek, M. Kucera, L. Fekete, J. Kopecek, J. Lancok, D. Kalita, J. Coraux, V. Bouchiat, J. Honolka  Scientific Reports 6, Article number: 23663 (2016) .




  7. 2015


  9. 75. Versatile strategy towards non−covalent functionalization of graphene by surface−confined supramolecular self−assembly of Janus tectons. Ping Du, David Bléger, Fabrice Charra, Vincent Bouchiat, David Kreher, et al. Beilstein journal of nanotechnology, 2015, 6, pp.632−639.





  14. 74.
    Efficient cleaning of poly−methyl−methacrylate residues from graphene with high−density H2 and H2−N2 dry plasmas, G. Cunge, D. Ferrah, C. Petit−Etienne, A. Davydova, H. Okuno, D. Kalita, V. Bouchiat and O. Renault Journal of Applied Physics, 118, 123302 (2015).





  19. 73.
    Interplay between Raman shift and thermal expansion in graphene: temperature-dependent measurements and analysis of substrate corrections S. Linas, Y. Magnin, B. Poinsot, O. Boisron, G. D. Forster, Z. Han, D. Kalita, V. Bouchiat, V. Martinez, R. Fulcrand, F. Tournus, V. Dupuis, F. Rabilloud, L. Bardotti, F. Calvo Phys Rev B. 91. 075426 201 (2015).



  22. 72.
    Phonon-Induced Transparency in Functionalized Single Layer Graphene

  23. Bruno Rousseau, François Lapointe, Minh Nguyen, Maxime Biron, Etienne Gaufrès, Saman Choubak, Zheng Han, Vincent Bouchiat, Patrick Desjardins, Michel Côté, Richard Martel Arxiv 1407.8141




  27. 2014


  29. 71 Collapse of superconductivity in a hybrid tin-graphene Josephson junction array

  30. Zheng Han, Adrien Allain, Hadi Arjmandi-Tash, Konstantin Tikhonov, Mikhail Feigel’man, Benjamin Sacépé and Vincent Bouchiat , Nature Physics vol. 10 P. 380  (May 2014).















  34. 70
    Surface-Confined Self-Assembled Janus Tectons: A Versatile Platform towards the Noncovalent Functionalization of Graphene,

  35. Ping Du, Maud Jaouen, Amandine Bocheux, Cyril Bourgogne, Zheng Han, Vincent Bouchiat, David Kreher, Fabrice Mathevet, Céline Fiorini-Debuisschert, Fabrice Charra, and André- Jean Attias, Angew. Chem. Int. Ed. September 15, 2014, Volume 53, Issue 38, pages 10060–10066 (2014).


  37. 69
    Strain superlattices and macroscale suspension of Graphene induced by corrugated substrates

  38. Antoine Reserbat-Plantey, Dipankar Kalita, Zheng Han, Laurence Ferlazzo, Katsuyoshi Komatsu, Chuan Li, Raphaël Weil, Arnaud Ralko, Laetitia Marty, Sophie Guéron, Nedjma Bendiab, Hélène Bouchiat, and Vincent Bouchiat, Nano Lett., 14 (9), pp 5044–5051 (2014).


  40. 68
    Electrical switch to the resonant magneto-phonon effect in graphene

  41. Przemyslaw Lesczynski, Zheng Han, Aurelien A.L. Nicolet, Benjamin Piot, Piotr Kossacki, Milan Orlita, Vincent Bouchiat, Marek Potemski, and Clement Faugeras, Nano Letters 14, 1460, (2014).


  43. 67
    Anomalous dissipation mechanism and Hall quantization limit in polycrystalline graphene grown by chemical vapor deposition

  44. F. Lafont, R. Ribeiro-Palau, Z. Han, A. Cresti, A. Delvallée, A. W. Cummings, S. Roche, V. Bouchiat, S. Ducourtieux, F. Schopfer, W. Poirier  Phys. Rev. B, 90, 115422 (2014) .



  47. 2013



  50. 66.
    Time- and space-modulated Raman signals in graphene-based optical nanomechanical cavities

  51. Antoine Reserbat-Plantey, Svetlana Klyatskaya, Valérie Reita, Laëtitia Marty, Olivier Arcizet, Mario Ruben, Nedjma Bendiab and Vincent Bouchiat, Journal of Optics, vol. 15, 114010 (2013).
















  56. 65.
    Homogeneous optical and electronic properties of graphene due to the suppression of multilayer patches during CVD on copper foils, Zheng Han, Amina Kimouche, Adrien Allain, Hadi Arjmandi-Tash, Antoine Reserbat-Plantey, Sébastien Pairis, Valérie Reita, Nedjma Bendiab, Johann Coraux, Vincent Bouchiat, Advanced Functional Materials Advanced , Volume 24, Issue 7, February 19, 2014, Pages: 964–970 arXiv:1205.1337 2013.



  59. 64.
    Electric field-controlled rippling of graphene

  60. Zoltán Osváth, Francois Lefloch, Vincent Bouchiat and Claude Chapelier, Nanoscale, 5(22), pp.10996-11002 (2013).



  63. 63.
    Functional Hybrid Systems Based on Large-Area High-Quality Graphene,

  64. Johann Coraux , Laëtitia Marty , Nedjma Bendiab , and Vincent Bouchiat,  Account of chemical Research,  46 (10), pp 2193–2201 (2013).





  69. 2012



  72. 62.
    A local optical probe for measuring motion and stress in a Graphene NEMS, Antoine Reserbat-Plantey, Laetitia Marty, Olivier Arcizet, Nedjma Bendiab, and Vincent Bouchiat, Nature Nanotechnology, vol. 7,  151, (2012).



  75. 61. Charges driving under the influence, Vincent Bouchiat, Nature Physics, 8, 862–863 (2012).



  78. 60.
    Electrical control of the superconducting-to-insulating transition in graphene–metal hybrids, Adrien Allain, Zheng Han and Vincent Bouchiat, Nature Materials, 11, 590–594, (2012).


  80. 59.
    Quantum and Thermal Phase Slips in Superconducting Niobium Nitride (NbN) Ultrathin Crystalline Nanowire: Application to Single Photon  Detection, Cécile Delacour, Bernard Pannetier, Jean-Claude Villegier, Vincent Bouchiat,  Nano letters. 12(7), 3501-6 (2012)





  85. 2011



  88. 58.
    Persistence of superconductivity in niobium ultra-thin films grown on R-Plane Sapphire, Cécile Delacour, Luc Ortega, Marc Faucher, Thierry Crozes, Thierry Fournier, Bernard Pannetier and Vincent Bouchiat, Phys. Rev. B 83, 144504 (2011).


  90. 57. Stable superconducting niobium ultrathin films, 2011 MRS Spring Meeting. , Cécile Delacour, Luc Ortega, Bernard Pannetier and Vincent
    Bouchiat, MRS Proceedings / Volume 1344 / (2011)




  94. 2010



  97. 56. Hybrid superconductor–semiconductor devices made from self-assembled SiGe nanocrystals on silicon ,G. Katsaros, P Spathis, M Stoffel, F Fournel, M. Mongillo, V Bouchiat, F Lefloch, A Rastelli, OG Schmidt, S De Franceschi, Nature Nanotechnology ,vol. 5 (6) pp. 458-464. (2010).














  100. 55.
    Tunable Superconducting Phase Transition in Metal-Decorated Graphene Sheets B.M.Kessler, C.O.Girit, A.Zettl, and V.Bouchiat, Physical Review Letters 104, 047001 (2010).




  104. 2009



  107. 54.
    Tunable Graphene Superconducting Quantum Interference Device, Çağlar Girit, V. Bouchiat, O. Naaman, Y. Zhang, M. Crommie, A. Zettl, I. Siddiqi,  Nano Lett., 9 (1), 198-199, (2009).


  109. 53.
    Superconductivity in a single−C60 transistor, Clemens B.Winkelmann, Nicolas Roch, Wolfgang Wernsdorfer, Vincent Bouchiat and Franck Balestro, Nature Physics vol. 5,p. 876 – 879, (2009).


  111. 52. Detection of Magnetic moments using a NanoSQUID : Limits of resolution and sensitivity in near-field SQUID magnetometry, V. Bouchiat ,  Superconductor Science and Technology Journal 22 (6): Art. No. 064002 JUN 2009


  113. 51. Optimizing the flux coupling between a nanoSQUID and a magnetic particle using atomic force microscope nanolithography Faucher, M; Jubert, PO; Fruchart, O; W.Wernsdorfer and V. Bouchiat,  SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 22 (6): Art. No. 064010 JUN 2009.


  115. 50.
    Current-phase relation in graphene and application to a superconducting quantum interference device, Çalar Girit, Vincent Bouchiat, Ofer Naaman, Yuanbo Zhang, M. F. Crommie, A. Zettl, Irfan Siddiqi, physica status solidi (b) Volume 246, Issue 11,: December 2009, Pages: 2568-2571.



  118. 2008


  120. 49.
    Large and Flat Graphene Flakes Produced by Epoxy Bonding and Reverse Exfoliation of Highly Oriented Pyrolitic Graphite, Vincent Huc, Nedjma Bendiab, Noël Rosman, Thomas Ebbesen, Cécile Delacour and Vincent Bouchiat,Nanotechnology 19, 455601, 2008.


  122. 48.
    Quantum phase transition in a single-molecule quantum dot, Roch, N; Florens, S; Bouchiat, V,   W. Wernsdorfer and F. Balestro, Nature,   Vol. 453,  633, (2008).


  124. 47.
    Kondo effects in a C60 single-molecule transistor, N. Roch, C. B. Winkelmann, S. Florens, V. Bouchiat, W. Wernsdorfer, and F. Balestro, Physica Status Solidi (b) Vol. 245, 1994-1997 , 2008.


  126. 46.
    Out-of-Equilibrium Singlet-Triplet Kondo Effect in a Single C60 Quantum Dot, Nicolas Roch, Serge Florens, Vincent Bouchiat, Wolfgang Wernsdorfer, Franck Balestro, J. Low Temp. Phys., vol. 153, p. 350, 2008.




  130. 2007


  132. 45. Superconducting single photon detectors made by local oxidation with an atomic force microscope, C. Delacour, M. Tarkhov, A. Korneev, J. Claudon, R. Espiau de Lamaestre, J.C. Villegier, J.-Ph. Poizat, G. Gol’tsman, B. Voronov, B. Pannetier and V. Bouchiat, Appl. Phys. Lett. 90, 191116 (2007).


  134. 44. Optical Switching of Porphyrin-Coated Silicon Nanowire Field Effect Transistors, Clemens B.  Winkelmann, Irina Ionica,  Xavier Chevalier, Guy Royal, Christophe Bucher, and Vincent Bouchiat, Nano Lett., 7 (6), 1454 -1458, 2007.


  136. 43. Carbon nanotube based magnetic flux detector for molecular spintronics, Cleuziou, JP; Wernsdorfer, W; Bouchiat, V, et al. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 244 , 4351-4355, 2007.


  138. 42. A quantitative comparison of resolution, scanning speed and lifetime behavior of CVD grown Single Wall Carbon Nanotubes and Silicon SPM probes using spectral methods, O Krause, V Bouchiat and A M Bonnot, Journal of Physics: Conference Series 61 (2007) 628–632


  140. 41.
    On the Relation between Electrical Noise Spectra and AC Conductivity in Disordered Systems , Chroboczek, J. A.; Ionica, Irina; Bouchiat, Vincent; Pollak, Michael, NOISE AND FLUCTUATIONS: 19th International Conference on Noise and Fluctuations; ICNF 2007. AIP Conference Proceedings, Volume 922, pp. 415-418 (2007).


  142. 40. Gate-Tuned High Frequency Response of Carbon Nanotube Josephson Junctions, J.-P. Cleuziou, W.Wernsdorfer, S. Andergassen, S. Florens, V. Bouchiat, Th. Ondarçuhu, and M. Monthioux, Phys. Rev. Lett. 99, 117001 (2007).




  146. 2006


  148. 39. Carbon-nanotube superconducting quantum interference device,

  149. J-P. Cleuziou, W. Wernsdorfer, V. Bouchiat, T. Ondarçuhu, M. Monthioux, Nature Nanotechnology. 1, 53 (2006)













  153. 38.
    Oriented growth of suspended single wall carbon nanotube by Hot Filament CVD, A.Iaia , L. Marty , C. Naud , V. Bouchiat, A. Loiseau , E. Di Muoio , T. Fournier and A. M. Bonnot , Thin Solid Films, 501, 221 (2006).


  155. 37.
    Self-assembled single wall carbon nanotube field effect transistors and AFM tips prepared by hot filament assisted CVD. L. Marty, A. Iaia, M. Faucher, V. Bouchiat, C. Naud,   M. Chaumont, T. Fournier, A.M. Bonnot , Thin Solid Films, 501, 299 (2006).


  157. 36.
    Self-Assembly of Carbon-Nanotube-Based Single-Electron Memories, Laetitia Marty, Anne-Marie Bonnot, Aurore Bonhomme, Antonio Iaia, Cécile Naud, Emmanuel André, and Vincent Bouchiat , Small, 2, 110, (2006).


  159. 35. Integration of self-assembled carbon nanotube transistors: Statistics and gate engineering at the wafer scale, L. Marty, A. Bonhomme, A. Iaia, E. André, E. Rauwel, C. Dubourdieu, A. Toffoli, F. Ducroquet, A.M. Bonnot, V. Bouchiat, Nanotechnology 17 (2006) 5038-5045.


  161. 34.
    Fabrication of High-Speed Single Photon Detectors in NbN for Quantum Information Processing, J-C Villégier, B. Delaet, Ph. Feautrier, L. Frey, C. Delacour, V. Bouchiat, Journal of Physics: Conference Series 43,   1373 (2006). 7th European Conference on  Applied Superconductivity



  164. Influence of Dopant Concentration on the Electrical Transport at Low Temperature in Silicon Nanowires, I. Ionica ; L. Montes ; J. Zimmermann ; I. Ionica ; L. Saminadayar ; V. Bouchiat,  Nanotechnology, 2006. IEEE-NANO 2006.



  167. 33. Raman spectroscopy of free-standing individual semiconducting single-wall carbon nanotubes, Paillet M, Langlois S, Sauvajol J.L, Marty L, Iaia A, Naud C, Bouchiat V, Bonnot AM  JOURNAL OF PHYSICAL CHEMISTRY B 110 (1): 164-169 JAN 12 2006 


  169. 32.
    Alteration of superconductivity and radial breathing modes in suspended ropes of carbon nanotubes by organic polymer coatings , M. Ferrier, A. Yu. Kasumov, V. Agache, L. Buchaillot, A-M. Bonnot, C. Naud, V. Bouchiat, R. Deblock, M. Kociak, M. Kobylko, S. Guéron, and H. Bouchiat, Phys. Rev. B 74, 241402 (2006).



  172. 2005


  174. 31.
    Analysis of mechanical properties of single wall carbon nanotubes fixed at a tip apex by atomic force microscopy, D Dietzel, Marc Faucher, Antonio Iaia, J.P. Aimé, S Marsaudon, A.M Bonnot, V. Bouchiat and G Couturier , Nanotechnology, 16, 73 (2005).


  176. 30. Field effect and Coulomb blockade in silicon on insulator nanostructures fabricated by an  atomic   force microscope I. Ionica, L. Montès, S.
    Ferraton, J. Zimmermann, L. Saminadayar, and V. Bouchiat  Solid-State Electronics 49 (9), 1497-1503 (2005).


  178. 29.
    Influence of the Geometry on the Coulomb Blockade in Silicon Nanostructures, Irina Ionica, Laurent Montès, Jacques Zimmermann, Laurent Saminadayar and Vincent Bouchiat,




  182. 2004



  185. 28. Silicon Nanostructures Patterned on SOI by AFM Lithography ,  Irina Ionica, Laurent Montès, Jacques Zimmermann, Laurent Saminadayar and Vincent Bouchiat, Proceedings of  NSTI-Nanotech 2004, www.nsti.org, ISBN 0-9728422-9-2 Vol. 3, 2004 165




  189.   2003


  191. 27.
    Schottky barriers and Coulomb blockade in self assembled single walled carbon nanotubes FETs  L. Marty, V. Bouchiat, C. Naud, M. Chaumont, T. Fournier, A.M. Bonnot, Nano Letters 3, 1115, (2003).


  193. 26. Single Carbon Nanotube–Superconductor Entangler: noise correlations and EPR states, V. Bouchiat, N. Chtchelkatchev G.B.Lesovik, D. Feinberg, J. Torres et T. Martin, Nanotechnology 14, 77 (2003).


  195. 25.
    Self-Assembled Single walled carbon nanotube field effect transistors ,  L. Marty*, C. Naud, M. Chaumont, A.M. Bonnot

  196. IEEE NANO vol.2, 240-243, 2003.



  199. 2002


  201. 24.
    Resist-less patterning of quantum nanostructures using an Atomic Force Microscope V. Bouchiat,  M. Faucher, T. Fournier, B. Pannetier, C. Thirion, W. Wernsdorfer, N. Clément, D. Tonneau, H. Dallaporta, S. Safarov, J.C. Villegier, D. Fraboulet, D.  Mariolle,J.Gautier  Microelectronic Engineering, Vol. 61-62 (1) pp. 517-522 (2002)


  203. 23. Electronic transport properties of single crystal silicon nanowires fabricated using an Atomic Force Microscope,N. Clément, V. Bouchiat, D. Tonneau, H. Dallaporta, D. Fraboulet, D. Mariole, J. Gautier and V. Safarov Physica E: Low-dimensional Systems and Nanostructures 13 (2-4) (2002) pp. 999-1002.


  205. 22.
    Niobium and niobium nitride Josephson junctions and SQUIDs based on anodized nanobridges made with an Atomic Force Microscope M. Faucher, T. Fournier, B. Pannetier, C. Thirion, W. Wernsdorfer, J.C. Villegier and V. Bouchiat  Physica C, 368, 211 (2002)


  207. 21. New developments in textured and epitaxial NbN superconducting layers for ultimate sensors and RSFQ digital circuits Villegier JC; Hadacek N; Jorel C; Bouchiat, V Faucher, M Febvre, P Rousy, A Lamura, G, JOURNAL DE PHYSIQUE IV  Volume: 12   Issue: PR3   Pages: 129-132   MAY 2002


  209. 20. Batch processing of nanometer scale electrical circuitry based on in-situ grown single-walled carbon nanotubes, L. Marty, V. Bouchiat, A.M. Bonnot, M. Chaumont, T. Fournier, S. Decossas, S. Roche, Microelectronic Engineering, Vol. 61-62 (1) pp. 485-489 (2002).


  211. 19. Electron transport in silicon nanostructures based on ultra-thin SOI A.Pouydebasque, L. Montes, J. Zimmermann, F. Balestra, D. Fraboulet, D. Mariolle, J. Gautier, F. Schopfer, V. Bouchiat and L. Saminadayar,  Journal de Phys. IV Vol. 12,  Pr3-97 , (2002).




  215. 2001


  217. 18.
    Josephson Junctions and Superconducting Interferences devices made by local anodisation of niobium ultra-thin films, V. Bouchiat, M. Faucher, C. Thirion, W. Wernsdorfer, T. Fournier  B. Pannetier, Applied Physics Letters,  vol.79, N°1, p.123, (2001).


  219. 17. Random Telegraph Signal and conduction properties of SOI deca-nano-Silicon Wires, D.Fraboulet, M.Nemoz, L.Palun(*), J.L.Thomassin, D.Mariolle, B.DeSalvo, V.Bouchiat(**), M.Sanquer, Proceedings Very Large Scale Integration VLSI-2001




  223. 2000


  225. 16. Direct patterning of noble metal nanostructures with a scanning tunneling microscope. F. Marchi, D. Tonneau, V.Bouchiat, H. Dallaporta, V. Safarov, ,P. Doppelt, R. Even, L. Beitone.Journal-of-Vacuum-Science-&-Technology-B-(Microelectronics-and-Nanometer-Structures). vol.18, no.3; May 2000; p.1171-6 .


  227. 15.
    Nanometer scale patterning by scanning tunneling microscope assisted chemical vapour deposition, Marchi-F; Tonneau-D; Dallaporta-H; Pierrisnard-R; Bouchiat-V; Safarov-VI; Doppelt-P; Even-R  Microelectronic-Engineering. vol.50, no.1-4; Jan. 2000; p.59-65.




  231. 1999


  233. 14. Quantum Coherence of charge states in the single electron box. V. Bouchiat, D. Vion, P. Joyez, D. Esteve, M.H. Devoret Journal of Superconductivity 12, 789 (1999),


  235. 13. Deposition of nanoscale rhodium dots by STM assisted CVD, F.Marchi, D. Tonneau, H. Dallaporta, V.Bouchiat, V. Safarov, ,P. Doppelt, R. Even, Journal de Phys. IV, vol.9, no.8; Sept. 1999; p.733-9




  239. 1998



  242. 12. Growth of silicon oxide on hydrogenated silicon during lithography with an atomic force microscope. F. Marchi, V. Bouchiat, H. Dallaporta, V. Safarov, D. Tonneau and P. Doppelt, Journal of Vaccum. Science and Technology B ,16, 2952, (1998).


  244. 11. Single cooper pair electronics V. Bouchiat, D.Vion, P.Joyez, D. Esteve, C. Urbina, M.H. Devoret Applied-Superconductivity. vol.6, no.10-12; Oct.-Dec. 1998; p.491-4


  246. 10. Quantum Coherence with a single Cooper pair V. Bouchiat, D. Vion, P. Joyez, D. Esteve, M.H. Devoret  Physica Scripta, 1998 , v.T76 , p.165




  250. 1997



  253. 9. Strong tunneling in the single electron transistor P. Joyez, V. Bouchiat, D. Esteve, C. Urbina, M.H. Devoret, Phys. Rev. Lett. 79, 1349-1352 (1997).


  255. 8. Measurement method of the antiproton gravitational mass using the single electron transistor, V. Bouchiat, G.Chardin, M.H.Devoret, D.Esteve, Hyperfine Interactions 109, 345, (1997).





  260. 1996 and Before


  262. 7. Single Cooper pair electronics V. BOUCHIAT, D. VION, P. JOYEZ,  D. ESTEVE and M.H. DEVORET,

  263. in « Quantum devices and circuits », Editeurs  K.Ismail, S. Bandyopadhay, J.P. Leburton, Imperial College Press; Ed. World Scientific (1996).



  266. 6. Lift-off lithography using an atomic force microscope V. Bouchiat, D. Esteve  Appl. Phys. Lett., 69, 3098-3100 (1996) .




  270.                 5. Single Cooper box experiment, V. Bouchiat, D.Vion, P. Joyez, D. Esteve and M. Devoret, Proceedings of the first Symposium of Advanced Physical Fields, Feb. 1996, Tsukuba, Japan.


  272. 4. Novel fabrication technique for single electron devices V. Bouchiat, D. Vion, D. Esteve, M.H. Devoret Proceedings of the Conference on ``Precision Electromagnetic Measurements'' CPEM'96 / June 1996 / Braünschweig, Germany Digest IEEE, New York, NY, USA; 1996.



  275. 3.Parity-controlled charge modulation of the supercurrent in the single electron transistor,  Joyez-P; Vion-D; Bouchiat-V; Esteve-D; Devoret-MH  Conference on Precision Electromagnetic Measurements Digest IEEE, New York, NY, USA; 1994; 542 pp.p.368-91994 DOI: 10.1109/CPEM.1994.3333



  1. 2.Magnetic Properties of Bi2.2Sr1.8Ca1.0Cu2.0Ox Single Crystal. TEION KOGAKU (Journal of the Cryogenic Society of Japan) 27(4):           hayashi1992.pdf363-367      January 1992 DOI: 10.2221/jcsj.27.363


1. Decay Rate Measurement of Magnetization and Transport Properties in Bi-2212 Single Crystal Advances in Superconductivity IV, pp.369-372 , January 1992 DOI: 10.1007/978-4-431-68195-3_77: